 | Project title | The effect of temperature on the creation of gallium oxide nanowires  |
| Difficulty Level | High school | |
| Project page | Click here to view this science project | |
Description | ||
| This science fair project was performed to ascertain the correct temperature for producing nanowires from gallium oxide, using the chemical vapor disposition method. The experiment was conducted for a temperature range of 860 °C to 960 °C. | ||
Instructions preview | ||
| 1. For this experiment, the independent variable is the temperature used for synthesizing the gallium nanowires. The dependent variable is the formation of the gallium nanowires on the substrate, which will be determined through observing the silicon wafers under an electron microscope. The constants (control variables) are the size of the wafers, the thickness of the Ni(NO3)2 substrate, the size of the gallium beads, the rate of increase in temperature and the level of pressure in the tube. 2. Coat a silicon waferwith Ni(NO3)2 solution and heat it to allow the water to evaporate. Repeat the process 2 more ..... | ||
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